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NCEP1260F

N-Channel Super Trench Power MOSFET

NCEP1260F Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switch

NCEP1260F General Description

The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

NCEP1260F Datasheet (387.94 KB)

Preview of NCEP1260F PDF

Datasheet Details

Part number:

NCEP1260F

Manufacturer:

NCE Power Semiconductor

File Size:

387.94 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP1260F N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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