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NCEP10N12

N-Channel Super Trench II Power MOSFET

NCEP10N12 Features

* VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

NCEP10N12 General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP10N12 Datasheet (413.19 KB)

Preview of NCEP10N12 PDF

Datasheet Details

Part number:

NCEP10N12

Manufacturer:

NCE Power Semiconductor

File Size:

413.19 KB

Description:

N-channel super trench ii power mosfet.

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TAGS

NCEP10N12 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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