NCEP11N10AQU - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCEP11N10AQU
Manufacturer	NCE Power Semiconductor
File Size	322.05 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP11N10AQU-NCEPowerSemiconductor.pdf

General

The NCEP11N10AQU uses Super Trench II technology that is.
VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of.
Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
Very low on-resistance RDS(on) and.

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Published: Oct 27, 2024 |