NCEP11N10AQU Datasheet - NCE Power Semiconductor

NCEP11N10AQU, N-Channel Super Trench II Power MOSFET

http://www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET .
General Features The NCEP11N10AQU uses Super Trench II technology that is. VDS =100V,ID =55A uniquely optimized to provide the most efficient.

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Datasheet Details

Part number:

NCEP11N10AQU

Manufacturer:

NCE Power Semiconductor

File Size:

322.05 KB

Description:

N-Channel Super Trench II Power MOSFET

Features

* The NCEP11N10AQU uses Super Trench II technology that is
* VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimize

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NCEP11N10AQU N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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