NCEP1580GU Datasheet - NCE Power Semiconductor

NCEP1580GU N-Channel Super Trench Power MOSFET

The NCEP1580GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP1580GU Features

* VDS =150V,ID =80A RDS(ON)=10.0mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package

NCEP1580GU-NCEPowerSemiconductor.pdf