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NCEP30T12G Datasheet - NCE Power Semiconductor

NCEP30T12G N-Channel Power MOSFET

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP30T12G Features

* VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested A

NCEP30T12G Datasheet (369.14 KB)

Preview of NCEP30T12G PDF
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Datasheet Details

Part number:

NCEP30T12G

Manufacturer:

NCE Power Semiconductor

File Size:

369.14 KB

Description:

N-channel power mosfet.

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Stock and price

Distributor
Microchip Technology Inc
M5KP8.0CAE3
0 In Stock
Qty : 500 units
Unit Price : $6.02

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NCEP30T12G N-Channel Power MOSFET NCE Power Semiconductor

NCEP30T12G Distributor