NCEP30T21GU Datasheet - NCE Power Semiconductor

NCEP30T21GU N-Channel Power MOSFET

The NCEP30T21GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP30T21GU Features

* VDS =30V,ID =210A RDS(ON)=1mΩ (typical) @ VGS=10V RDS(ON)=1.25mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Appl

NCEP30T21GU-NCEPowerSemiconductor.pdf