NCEP30T15GU Datasheet - NCE Power Semiconductor

NCEP30T15GU N-Channel Power MOSFET

The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw.

NCEP30T15GU Features

* VDS =30V,ID =150A RDS(ON)=1.5mΩ (typical) @ VGS=10V RDS(ON)=2.0mΩ (typical) @ VGS=4.5V Schematic Diagram Only D D D D DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating Use

* 100%

NCEP30T15GU-NCEPowerSemiconductor.pdf