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2SD1616 NPN SILICON EPITAXIAL TRANSISTOR

2SD1616 Description

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATUR.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SD1616 Features

* Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
* Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
* Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) P

2SD1616 Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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Datasheet Details

Part number
2SD1616
Manufacturer
NEC
File Size
98.76 KB
Datasheet
2SD1616_NEC.pdf
Description
NPN SILICON EPITAXIAL TRANSISTOR

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NPN SILICON EPITAXIAL TRANSISTOR NEC
NEC 2SD1616-like datasheet