* Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
* Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
* Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) P
2SD1616
NEC
98.76 KB
Npn silicon epitaxial transistor.
DATA SHEET
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATUR.
📁 Related Datasheet
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Application
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Outline
TO-126 M.
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2SD1611
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For power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit:.
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2SD1615 - NPN Transistor
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audi.
2SD1615 - NPN Silicon Transistor
(Guangdong Kexin Industrial)
SMD Type
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Transistors
..
Features
World Standard Miniature Package. Low VCE(sat) VCE(sat) .
2SD1615A - NPN Transistor
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audi.
2SD1616 - NPN Transistor
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2SD1616/A
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier *.
2SD1616 - NPN Transistors
(Weitron Technology)
..
2SD1616 2SD1616A
NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Colle.
