2SD1616 Datasheet (NEC) - NPN SILICON EPITAXIAL TRANSISTOR

2SD1616, NPN SILICON EPITAXIAL TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r

2SD1616 Features

* Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)

* Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A

* Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) P