2SD1616A Features
* Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
* Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
* Complementary transistor with the 2SB1116 and 1116A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector
Datasheet Details
2SD1616A, 2SD1616
NEC
98.76 KB
Npn silicon epitaxial transistor.
This datasheet PDF includes multiple part numbers: 2SD1616A, 2SD1616.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
2SD1616 NPN Transistor (Unisonic Technologies)
2SD1616 NPN SILICON EPITAXIAL TRANSISTOR (NEC)
2SD1616 NPN Transistors (Weitron Technology)
2SD1616 NPN Silicon Transistor (SEMTECH)
2SD1616A NPN Epitaxial Silicon Transistor (Unisonic Technologies)
2SD1616A NPN Silicon Transistor (Micro Electronics)
2SD1616A NPN Transistors (Weitron Technology)
2SD1616A NPN Transistor (SeCoS)
2SD1616A Distributor
