2SJ598 Datasheet - NEC

2SJ598 P-Channel MOSFET

2SJ598 Features

* Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS =

* 10 V, ID =

* 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =

* 4.0 V, ID =

* 6 A)

* Low Ciss: Ciss = 720 pF TYP.

* Built-in gate protection diode

* TO-251/TO-252 package ORDERING INFORMATION P

Datasheet Details

2SJ598

NEC

157.83 KB

P-channel mosfet.

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2SJ598 2SJ598 P-Channel MOSFET NEC

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