2SJ559 Datasheet (NEC) - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SJ559, P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source.

The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 *0.05 1.6 ± 0.1 0.8 ± 0.

2SJ559 Features

* Can be driven by a 2.5 V power source.

* Low gate cut-off voltage. 1.0 1.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg

* 30 V V A A