2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING .
The 2SJ559 is a switching device which can be driven directly by a 2.

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Datasheet Specifications

Part number: 2SJ559
Manufacturer: NEC
File Size: 50.03 KB
Datasheet: 2SJ559_NEC.pdf
Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Features

* Can be driven by a 2.5 V power source.
* Low gate cut-off voltage. 1.0 1.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
* 30 V V A A

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING NEC

NEC 2SJ559-like datasheet