2SJ133 P-Channel Power MOSFET

NEC

Description

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: 2SJ133
Manufacturer: NEC
File Size: 128.23 KB
Datasheet: 2SJ133-NEC.pdf
Description: P-Channel Power MOSFET

Features

* Gate drive available at logic level (VGS =
* 4 V)
* High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω)
* 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES
* Standard Please refer to “Quality G

Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) Drain current (pulse) ID(DC) ID(pulse) TC = 25°C PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total powe

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2SJ133 P-Channel Power MOSFET NEC

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