* Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
* Low Ciss : Ciss = 7200 pF (TYP.)
* Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Ga
2SK2826-S Datasheet (74.62 KB)
2SK2826-S
NEC
74.62 KB
Switching n-channel power mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2.
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