NE850R599A Datasheet - NEC

NE850R599A, C-BAND MEDIUM POWER GaAs MESFET

The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices.

Features

* HIGH OUTPUT POWER: 0.5 W
* HIGH LINEAR GAIN: 9.5 dB
* HIGH EFFICIENCY (PAE): 38%
* SUPERIOR INTERMODULATION DISTORTION
* INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1

NE850R599A_NEC.pdf