* Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) 1.44 RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
* 0.05 0.8 RDS(on)3 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)
* Low Ciss: Ciss = 2200 pF TYP.
* Bu
UPA1721
NEC
66.78 KB
Switching n-channel power mos fet industrial use.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1721
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; G.
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