* 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5 1.44 RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
* 0.05 RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)
* Low Ciss: Ciss = 2700
UPA1726
NEC
58.92 KB
Switching n-channel power mos fet industrial use.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1726
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; G.
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