* Low on-resistance N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) 1.44 1.8 MAX. P-Channel 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
* 0.05 RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) P-Channel RDS(on)1 = 36 mΩ MAX. (VGS =
UPA1792
NEC
104.72 KB
Switching n- and p-channel power mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1792
SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 N-Channel 1.
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