* Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
* 6-pin thin-type small mini mold package adopted
* Built-in 2 transistors (2 u 2SC5184) PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATIO
UPA828TF
NEC
92.62 KB
High-frequency low-noise amplifier npn silicon epitaxial twin transistor.
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
PPA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u.
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