UPD5747T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

NEC

Datasheet Details

Part number	UPD5747T6J
Manufacturer	NEC
File Size	90.13 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet	UPD5747T6J_NEC.pdf

The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

Low Noise.
High Gain : NV =.
101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimol.

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Published: Apr 23, 2011 |