UPD5739T7A Datasheet, cmos equivalent, Renesas

UPD5739T7A Features and benefits

UPD5739T7A Application

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UPD5738T6N - WIDE BAND DPDT SWITCH (NEC)
DATA SHEET CMOS INTEGRATED CIRCUIT μPD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch.

UPD5702TU - Si LD MOS POWER AMPLIFIER (CEL)
NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POW.

UPD5710TK - SINGLE CONTROL CMOS SPDT SWITCH (CEL)
DISCONTINUED DATA SHEET NEC's WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH UPD5710TK FEATURES • SUPPLY VOLTAGE : 1.8 to 3.3 V (2.8 V TYP.) • SINGLE S.

UPD5713TK - WIDE BAND SPDT SWITCH (CEL)
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DATA SHEET CMOS INTEGRATED CIRCUIT µPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel i.

UPD5716GR - CMOS MMIC 4 x 2 IF SWITCH MATRIX (NEC)
DATA SHEET CMOS INTEGRATED CIRCUIT µPD5716GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel i.

UPD5741T6J - LOW NOISE AND HIGH GAIN AMPLIFIER (Renesas)
DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6.

UPD5742T6J - LOW NOISE AND HIGH GAIN AMPLIFIER (Renesas)
DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6.

UPD5747T6J - LOW NOISE AND HIGH GAIN AMPLIFIER (NEC)
DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747.

UPD5750T7D - SiGe BiCMOS (Renesas)
Data Sheet μPD5750T7D SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μ.