UPD5756T6N Datasheet - Renesas

UPD5756T6N SiGe BiCMOS

R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics. This IC is manufactured using our latest SiGe BiCMOS process tha.

UPD5756T6N Features

* Low voltage operation

* Low current consumption

* : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP.) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)

UPD5756T6N_Renesas.pdf