UPD5756T6N

SiGe BiCMOS

Renesas

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Rochester Electronics LLC	UPD5756T6N-E2-A	IC RF AMP 40MHZ-1GHZ 6TSON	DigiKey	0	444 units	$0.68	🛒 Buy Now

UPD5756T6N Datasheet (314.72 KB)

UPD5756T6N Datasheet Preview — Preview of UPD5756T6N PDF Datasheet

Datasheet Details

Part number:

UPD5756T6N

Manufacturer:

Renesas ↗

File Size:

314.72 KB

Description:

Sige bicmos

UPD5756T6N Features

* Low voltage operation

* Low current consumption

* : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP.) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)

UPD5756T6N General Description

R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics. This IC is manufactured using our latest SiGe BiCMOS process tha.

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UPD5756T6N SiGe BiCMOS Renesas

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