Part number: UPD5756T6N
Manufacturer: Renesas (https://www.renesas.com/)
File Size: 314.72KB
Download: 📄 Datasheet
Description: SiGe BiCMOS
Part number: UPD5756T6N
Manufacturer: Renesas (https://www.renesas.com/)
File Size: 314.72KB
Download: 📄 Datasheet
Description: SiGe BiCMOS
* Low voltage operation
* Low current consumption
*
*
*
*
* : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High.
* Low noise amplifier for the digital TV system, etc.
ORDERING INFORMATION
Part Number μPD5756T6N-E2 Order Number μ.
R09DS0026EJ0100 Rev.1.00 Oct 04, 2011
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics. This IC is man.
Image gallery
TAGS
📁 Related Datasheet
UPD5750T7D - SiGe BiCMOS
(Renesas)
Data Sheet
μPD5750T7D
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
DESCRIPTION
R09DS0009EJ0100 Rev.1.00 Feb 24, 2011
The μ.
UPD5753T7G - SiGe BiCMOS
(Renesas)
PreliminaryData Sheet
μPD5753T7G
SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Tone/Voltage Controller
FEATURES
• 4 independent IF channel.
UPD5754T7A - SiGe BiCMOS
(Renesas)
PreliminaryData Sheet
μPD5754T7A
FEATURES
SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Gain and Tone/Voltage Controller
R09DS0012EJ0100.
UPD5758T6J - Low Noise and High Gain Amplifier
(Renesas)
Preliminary Data Sheet
μPD5758T6J
Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
DESCRIPTION
R09DS0017EJ0100 Rev.1.00 Ap.
UPD5759T6J - Low Noise and High Gain Amplifier
(Renesas)
Preliminary Data Sheet
μPD5759T6J
Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
DESCRIPTION
R09DS0018EJ0100 Rev.1.00 Ap.
UPD5702TU - Si LD MOS POWER AMPLIFIER
(CEL)
NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POW.
UPD5710TK - SINGLE CONTROL CMOS SPDT SWITCH
(CEL)
DISCONTINUED
DATA SHEET
NEC's WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
UPD5710TK
FEATURES
• SUPPLY VOLTAGE : 1.8 to 3.3 V (2.8 V TYP.)
• SINGLE S.
UPD5713TK - WIDE BAND SPDT SWITCH
(CEL)
www..com
PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT
uPD5713TK
WIDE BAND SPDT SWITCH
DESCRIPTION
The uPD5713TK is a CMOS MMIC for wid.
UPD5715GR - CMOS MMIC 4 x 2 IF SWITCH MATRIX
(NEC)
DATA SHEET
CMOS INTEGRATED CIRCUIT
µPD5715GR
CMOS MMIC 4 x 2 IF SWITCH MATRIX
FEATURES
• 4 independent IF channels, integral switching to channel i.
UPD5716GR - CMOS MMIC 4 x 2 IF SWITCH MATRIX
(NEC)
DATA SHEET
CMOS INTEGRATED CIRCUIT
µPD5716GR
CMOS MMIC 4 x 2 IF SWITCH MATRIX
FEATURES
• 4 independent IF channels, integral switching to channel i.