UPD5756T6N - SiGe BiCMOS

Renesas

UPD5756T6N Datasheet Preview — Preview of UPD5756T6N PDF

Datasheet Details

Part number	UPD5756T6N
Manufacturer	Renesas ↗
File Size	314.72 KB
Description	SiGe BiCMOS
Datasheet	UPD5756T6N_Renesas.pdf

UPD5756T6N Product details

Description

R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application.This IC exhibits low noise figure and low distortion characteristics.This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.

Features

Low voltage operation.
Low current consumption.
: : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP. ) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode) ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode) f = 40 to 1 000 MHz NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode) IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode) Lins = 1.7 dB TYP. @f = 1 000 MHz (.

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Published: Nov 10, 2013 |