Datasheet Details
Part number:
UPD5756T6N
Manufacturer:
File Size:
314.72 KB
Description:
SiGe BiCMOS
Features
* Low voltage operation
* Low current consumption
* : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP.) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)
UPD5756T6N, SiGe BiCMOS
R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application.
This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process tha
UPD5756T6N Distributor
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