UPD5756T6N SiGe BiCMOS

Renesas

Description

Data Sheet μPD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function .
R09DS0026EJ0100 Rev.

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Datasheet Specifications

Part number: UPD5756T6N
Manufacturer: Renesas ↗
File Size: 314.72 KB
Datasheet: UPD5756T6N_Renesas.pdf
Description: SiGe BiCMOS

Features

* Low voltage operation
* Low current consumption
* : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP. ) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)

Applications

* Low noise amplifier for the digital TV system, etc. ORDERING INFORMATION Part Number μPD5756T6N-E2 Order Number μPD5756T6N-E2-A Package 6-pin plastic TSON (T6N) (Pb-Free) Marking C4C Supplying Form
* Embossed tape 8 mm wide
* Pin 1, 6 face the perforation side of the tape

UPD5756T6N Distributors

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UPD5756T6N SiGe BiCMOS Renesas

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