UPD5759T6J Datasheet - Renesas

UPD5759T6J Low Noise and High Gain Amplifier

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold.

UPD5759T6J Features

* Low noise

* : NV =

* 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =

* 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP.

UPD5759T6J Datasheet (216.59 KB)