UPD5759T6J - Low Noise and High Gain Amplifier

Renesas

UPD5759T6J Datasheet Preview — Preview of UPD5759T6J PDF

Datasheet Details

Part number	UPD5759T6J
Manufacturer	Renesas ↗
File Size	216.59 KB
Description	Low Noise and High Gain Amplifier
Datasheet	UPD5759T6J_Renesas.pdf

UPD5759T6J Product details

Description

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.This device exhibits low noise and high voltage gain characteristics.The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

Features

Low noise.
: NV =.
98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface.

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Published: Nov 10, 2013 |