Datasheet Details
Part number:
UPD5759T6J
Manufacturer:
File Size:
216.59 KB
Description:
Low Noise and High Gain Amplifier
Features
* Low noise
* : NV =
* 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =
* 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP.
UPD5759T6J, Low Noise and High Gain Amplifier
R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
This device exhibits low noise and high voltage gain characteristics.
The package is a 3-pin thin-type lead-less minimold
UPD5759T6J Distributor
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