UPD5758T6J Datasheet - Renesas

UPD5758T6J Low Noise and High Gain Amplifier

R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold.

UPD5758T6J Features

* Low noise

* : NV =

* 101 dBV TYP. @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =

* 102 dBV TYP. @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +5.7 dB TYP. @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP

UPD5758T6J Datasheet (197.02 KB)