UPD5750T7D - SiGe BiCMOS
(Renesas)
Data Sheet
μPD5750T7D
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
DESCRIPTION
R09DS0009EJ0100 Rev.1.00 Feb 24, 2011
The μ.
UPD5753T7G - SiGe BiCMOS
(Renesas)
PreliminaryData Sheet
μPD5753T7G
SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Tone/Voltage Controller
FEATURES
• 4 independent IF channel.
UPD5756T6N - SiGe BiCMOS
(Renesas)
Data Sheet
μPD5756T6N
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
DESCRIPTION
R09DS0026EJ0100 Rev.1.00 Oct 04, 2011
The μ.
UPD5758T6J - Low Noise and High Gain Amplifier
(Renesas)
Preliminary Data Sheet
μPD5758T6J
Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
DESCRIPTION
R09DS0017EJ0100 Rev.1.00 Ap.
UPD5759T6J - Low Noise and High Gain Amplifier
(Renesas)
Preliminary Data Sheet
μPD5759T6J
Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
DESCRIPTION
R09DS0018EJ0100 Rev.1.00 Ap.
UPD5702TU - Si LD MOS POWER AMPLIFIER
(CEL)
NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POW.