Datasheet4U Logo Datasheet4U.com

UPD5750T7D Datasheet - Renesas

UPD5750T7D SiGe BiCMOS

R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the.

UPD5750T7D Features

* Low voltage operation

* Low mode control voltage

* Low current consumption

* : VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Byp

UPD5750T7D Datasheet (319.30 KB)

Preview of UPD5750T7D PDF

Datasheet Details

Part number:

UPD5750T7D

Manufacturer:

Renesas ↗

File Size:

319.30 KB

Description:

Sige bicmos.

📁 Related Datasheet

UPD5753T7G SiGe BiCMOS (Renesas)

UPD5754T7A SiGe BiCMOS (Renesas)

UPD5756T6N SiGe BiCMOS (Renesas)

UPD5758T6J Low Noise and High Gain Amplifier (Renesas)

UPD5759T6J Low Noise and High Gain Amplifier (Renesas)

UPD5702TU Si LD MOS POWER AMPLIFIER (CEL)

UPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT (NEC)

UPD5710TK SINGLE CONTROL CMOS SPDT SWITCH (CEL)

UPD5710TK WIDE BAND SPDT SWITCH (NEC)

UPD5713TK WIDE BAND SPDT SWITCH (CEL)

TAGS

UPD5750T7D SiGe BiCMOS Renesas

Image Gallery

UPD5750T7D Datasheet Preview Page 2 UPD5750T7D Datasheet Preview Page 3

UPD5750T7D Distributor