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UPD5742T6J Datasheet, amplifier equivalent, Renesas

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Part number: UPD5742T6J

Manufacturer: Renesas (https://www.renesas.com/)

File Size: 115.22KB

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Description: LOW NOISE AND HIGH GAIN AMPLIFIER

📥 Download PDF (115.22KB) Datasheet Preview: UPD5742T6J

PDF File Details

Part number: UPD5742T6J

Manufacturer: Renesas (https://www.renesas.com/)

File Size: 115.22KB

Download: 📄 Datasheet

Description: LOW NOISE AND HIGH GAIN AMPLIFIER

UPD5742T6J Features and benefits


* Low Noise : NV = −98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
* High Gain : GV = +9.0 dB TYP..

UPD5742T6J Application


* Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package μPD5742T6J-E4 μPD5742T6J-E4-A.

UPD5742T6J Description

The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less .

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TAGS

UPD5742T6J
LOW
NOISE
AND
HIGH
GAIN
AMPLIFIER
Renesas

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