UPD5741T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

Renesas

UPD5741T6J Datasheet Preview — Preview of UPD5741T6J PDF

Datasheet Details

Part number	UPD5741T6J
Manufacturer	Renesas ↗
File Size	115.77 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet	UPD5741T6J-Renesas.pdf

UPD5741T6J Product details

Description

The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.This device exhibits low noise and high voltage gain characteristics.The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Features

Low Noise : NV =.
101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimol.

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Published: Apr 1, 2016 |