UPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER

Renesas

Description

DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE .
The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

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Datasheet Specifications

Part number: UPD5741T6J
Manufacturer: Renesas ↗
File Size: 115.77 KB
Datasheet: UPD5741T6J-Renesas.pdf
Description: LOW NOISE AND HIGH GAIN AMPLIFIER

Features

* Low Noise : NV =
* 101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =
* 102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
* High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ

Applications

* Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package μPD5741T6J-E4 μPD5741T6J-E4-A 3-pin thin-type leadless minimold (Pb-Free) Marking Supplying Form 6T
* Embossed tape 8 mm wide
* Pin 3 (GND) face the perforation side of the tape

UPD5741T6J Distributors

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UPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER Renesas

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