UPG153TB
NEC
56.70kb
L-band spdt switch. The µPG153TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless teleph
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UPG152TA - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
PPG152TA
L-BAND SPDT SWITCH
DESCRIPTION
The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switc.
UPG154TB - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG154TB
L-BAND SPDT SWITCH
DESCRIPTION
The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET swit.
UPG155TB - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG155TB
L-BAND SPDT SWITCH
DESCRIPTION
The µPG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET swit.
UPG158TB - L/ S- BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG158TB
L, S- BAND SPDT SWITCH
DESCRIPTION
The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET s.
UPG100P - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circui.
UPG101P - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circui.
UPG103B - WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifier.
UPG10N60E - SMPS N-CHANNEL IGBT
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
UPG10N60E
Preliminary
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
DESCRIPTION
The UTC UPG10N60E .
UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER
(NEC)
..
2-8 GHz WIDE-BAND AMPLIFIER
UPG110B UPG110P
FEATURES
• WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWE.
UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit desi.