UPG154TB Datasheet, Switch, NEC

UPG154TB Features

• Switch
• Low Insertion Loss : LINS = 0.65 dB TYP. @VCONT = +3.0 V/0 V, VDD = +3.0 V, CX = 2.0 pF, f = 2 GHz
• High Power Switching : Pin (1 dB) = +30 dBm TYP. @VCONT = +3.0 V/0

PDF File Details

Part number:

UPG154TB

Manufacturer:

NEC

File Size:

94.18kb

Download:

📄 Datasheet

Description:

L-band spdt switch. The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless teleph

UPG154TB Application

• Applications
• L, S-band digital cellular or cordless telephone
• PCS, WLAN and WLL applications ORDERING INFORMATION Part Number M

TAGS

UPG154TB

NEC

📁 Related Datasheet

UPG152TA - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT PPG152TA L-BAND SPDT SWITCH DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switc.

UPG153TB - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG153TB L-BAND SPDT SWITCH DESCRIPTION The µPG153TB is an L-band SPDT (Single Pole Double Throw) GaAs FET swit.

UPG155TB - L-BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG155TB L-BAND SPDT SWITCH DESCRIPTION The µPG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET swit.

UPG158TB - L/ S- BAND SPDT SWITCH (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET s.

UPG100P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG101P - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circui.

UPG103B - WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG103B WIDE-BAND AMPLIFIER µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifier.

UPG10N60E - SMPS N-CHANNEL IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UPG10N60E Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UPG10N60E .

UPG110B - 2-8 GHZ WIDE-BAND AMPLIFIER (NEC)
.. 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWE.

UPG110P - 2 to 8 GHz WIDE-BAND AMPLIFIER (NEC)
DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit desi.