P9006EDA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P9006EDA, a member of the P9006EDA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	P9006EDA
Manufacturer	NIKO-SEM
File Size	210.83 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	P9006EDA Datasheet
Additional preview pages of the P9006EDA datasheet.

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Full PDF Text Transcription

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NIKO-SEM P-Channel Enhancement Mode P9006EDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ ID -13A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS -60 ±25 -13 -8.3 -37 -17.2 14.7 31.2 12.

Published: Dec 2, 2024 |