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P9006EDA, P9006EDA-NIKO Datasheet - NIKO-SEM

P9006EDA P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM P-Channel Enhancement Mode P9006EDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ ID -13A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 1.

P9006EDA-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: P9006EDA, P9006EDA-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

P9006EDA, P9006EDA-NIKO

Manufacturer:

NIKO-SEM

File Size:

210.83 KB

Description:

P-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: P9006EDA, P9006EDA-NIKO.
Please refer to the document for exact specifications by model.

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P9006EDA P9006EDA-NIKO P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

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