P9006EVA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P9006EVA, a member of the P9006EVA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	P9006EVA
Manufacturer	NIKO-SEM
File Size	416.96 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	P9006EVA Datasheet
Additional preview pages of the P9006EVA datasheet.

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Full PDF Text Transcription

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NIKO-SEM P-Channel Logic Level Enhancement Mode P9006EVA Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ -3.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD Tj, Tstg G : GATE D : DRAIN S : SOURCE 100% UIS Tested 100% Rg Tested LIMITS -60 ±25 -3.6 -2.9 -20 -17.2 14.7 2.4 1.

Published: Dec 2, 2024 |