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PG1010BD - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PG1010BD, a member of the PG1010BD-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number PG1010BD
Manufacturer NIKO-SEM
File Size 253.54 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PG1010BD Datasheet
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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.5mΩ ID 59A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A TYPICAL 12 3 1. GATE 2. DRAIN 3.
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