PG1010BIS - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PG1010BIS, a member of the PG1010BIS-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PG1010BIS
Manufacturer	NIKO-SEM
File Size	311.17 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PG1010BIS Datasheet
Additional preview pages of the PG1010BIS datasheet.

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.5mΩ ID 64A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 12 3 1. GATE 2. DRAIN 3. SOURCE LIMITS 100 ±20 64 45 150 12.5 78.

Published: Dec 2, 2024 |