Datasheet Details
Part number:
PG1010BIS, PG1010BIS-NIKO
Manufacturer:
NIKO-SEM
File Size:
311.17 KB
Description:
N-channel enhancement mode field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: PG1010BIS, PG1010BIS-NIKO.
Please refer to the document for exact specifications by model.
PG1010BIS, PG1010BIS-NIKO, N-Channel Enhancement Mode Field Effect Transistor
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.5mΩ ID 64A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Juncti
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