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PG1010BIS, PG1010BIS-NIKO Datasheet - NIKO-SEM

PG1010BIS N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.5mΩ ID 64A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Juncti.

PG1010BIS-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: PG1010BIS, PG1010BIS-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

PG1010BIS, PG1010BIS-NIKO

Manufacturer:

NIKO-SEM

File Size:

311.17 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: PG1010BIS, PG1010BIS-NIKO.
Please refer to the document for exact specifications by model.

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TAGS

PG1010BIS PG1010BIS-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

PG1010BIS Distributor