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NTE6508 Integrated Circuit CMOS / 1K Static RAM (SRAM)

NTE6508 Description

NTE6508 Integrated Circuit CMOS, 1K Static RAM (SRAM) .
The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16. Lead DIP type package fabricated using self. aligned silicon gate technology.

NTE6508 Features

* D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On
* Chip Address Register Absolute Maximum Ratings: (Note 1) Supply Voltage

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Datasheet Details

Part number
NTE6508
Manufacturer
NTE Electronics
File Size
37.57 KB
Datasheet
NTE6508_NTEElectronics.pdf
Description
Integrated Circuit CMOS / 1K Static RAM (SRAM)

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Integrated Circuit CMOS Static RAM SRAM NTE Electronics
NTE Electronics NTE6508-like datasheet