NTE6508 - Integrated Circuit CMOS / 1K Static RAM (SRAM)

NTE Electronics

The NTE6508 by NTE Electronics is a Integrated Circuit CMOS / 1K Static RAM (SRAM). Below is the official datasheet preview.

Datasheet Details

Part number	NTE6508
Manufacturer	NTE Electronics
File Size	37.57 KB
Description	Integrated Circuit CMOS / 1K Static RAM (SRAM)
Datasheet	NTE6508_NTEElectronics.pdf
Additional preview pages of the NTE6508 datasheet.

The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16 Lead DIP type package fabricated using self aligned silicon gate technology.

D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On.
Chip Address Register Absolute Maximum Ratings: (Note 1) Supply Voltage.
. . . . +7V Input, Output or I/O Voltage.
. . . . G.

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Published: May 12, 2005 |