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NTE6508

Integrated Circuit CMOS / 1K Static RAM (SRAM)

NTE6508 Features

* D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On

* Chip Address Register Absolute Maximum Ratings: (Note 1) Supply Voltage . . . . . . . . . . . . . . .

NTE6508 General Description

The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16

*Lead DIP type package fabricated using self

*aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allow.

NTE6508 Datasheet (37.57 KB)

Preview of NTE6508 PDF

Datasheet Details

Part number:

NTE6508

Manufacturer:

NTE Electronics

File Size:

37.57 KB

Description:

Integrated circuit cmos / 1k static ram (sram).

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NTE6508 Integrated Circuit CMOS Static RAM SRAM NTE Electronics

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