NTE6508 Integrated Circuit CMOS / 1K Static RAM (SRAM)

NTE Electronics

Description

NTE6508 Integrated Circuit CMOS, 1K Static RAM (SRAM) .
The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16. Lead DIP type package fabricated using self. aligned silicon gate technology.

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Datasheet Specifications

Part number: NTE6508
Manufacturer: NTE Electronics
File Size: 37.57 KB
Datasheet: NTE6508_NTEElectronics.pdf
Description: Integrated Circuit CMOS / 1K Static RAM (SRAM)

Features

* D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On
* Chip Address Register Absolute Maximum Ratings: (Note 1) Supply Voltage

NTE6508 Distributors

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NTE6508 Integrated Circuit CMOS Static RAM SRAM NTE Electronics

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