NTE65101 Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

NTE Electronics

Description

NTE65101 Integrated Circuit 256 x 4 *Bit Static Random Access Memory (SRAM) .
The NTE65101 is a CMOS 1024. bit device organized in 256 words by 4 bits in a 22. Lead DIP type package.

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Datasheet Specifications

Part number: NTE65101
Manufacturer: NTE Electronics
File Size: 30.81 KB
Datasheet: NTE65101_NTEElectronics.pdf
Description: Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

Features

* D Organized as 256 Bytes of 4
* Bits D Static Operation D Low Standby Power D Three
* State Output D Single 5V Power Supply D Data Retention to 2V D TTL Compatible D Maximum Access Time: 450ns Absolute Maximum Ratings: (Voltages referenced to VSS Pin8) Supply Voltage, VCC

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NTE65101 Integrated Circuit 256 4-Bit Static Random Access Memory SRAM NTE Electronics

NTE Electronics NTE65101-like datasheet