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NTE65101 Datasheet - NTE Electronics

NTE65101 Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

The NTE65101 is a CMOS 1024 *bit device organized in 256 words by 4 bits in a 22 *Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus *oriented syst.

NTE65101_NTEElectronics.pdf