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NTE65101

Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

NTE65101 Features

* D Organized as 256 Bytes of 4

* Bits D Static Operation D Low Standby Power D Three

* State Output D Single 5V Power Supply D Data Retention to 2V D TTL Compatible D Maximum Access Time: 450ns Absolute Maximum Ratings: (Voltages referenced to VSS Pin8) Supply Voltage, VCC . . . . . . .

NTE65101 General Description

The NTE65101 is a CMOS 1024

*bit device organized in 256 words by 4 bits in a 22

*Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus

*oriented syst.

NTE65101 Datasheet (30.81 KB)

Preview of NTE65101 PDF

Datasheet Details

Part number:

NTE65101

Manufacturer:

NTE Electronics

File Size:

30.81 KB

Description:

Integrated circuit 256 x 4-bit static random access memory (sram).

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NTE65101 Integrated Circuit 256 4-Bit Static Random Access Memory SRAM NTE Electronics

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