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BLF879P Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF879P Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF879P General Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mo.

BLF879P Datasheet (229.59 KB)

Preview of BLF879P PDF

Datasheet Details

Part number:

BLF879P

Manufacturer:

NXP ↗ Semiconductors

File Size:

229.59 KB

Description:

Uhf power ldmos transistor.

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BLF879P UHF power LDMOS transistor NXP Semiconductors

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