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PMEG2010AEB - 20V 1A ultra low VF MEGA Schottky barrier rectifier

PMEG2010AEB Description

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package.
cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress pr.

PMEG2010AEB Features

* Forward current: 1.0 A
* Reverse voltage: 20 V
* Ultra low forward voltage

PMEG2010AEB Applications

* Low voltage rectification
* High efficiency DC/DC conversion
* Voltage clamping
* Inverse-polarity protection
* Low power consumption applications. 1 2 PMEG2010AEB QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage MAX. 1 20 UNIT A

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Datasheet Details

Part number
PMEG2010AEB
Manufacturer
NXP ↗ Semiconductors
File Size
81.50 KB
Datasheet
PMEG2010AEB_NXPSemiconductors.pdf
Description
20V 1A ultra low VF MEGA Schottky barrier rectifier

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NXP Semiconductors PMEG2010AEB-like datasheet