PMEG2010AEB 20V 1A ultra low VF MEGA Schottky barrier rectifier

NXP Semiconductors

Description

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package.
cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress pr.

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Datasheet Specifications

Part number: PMEG2010AEB
Manufacturer: NXP ↗ Semiconductors
File Size: 81.50 KB
Datasheet: PMEG2010AEB_NXPSemiconductors.pdf
Description: 20V 1A ultra low VF MEGA Schottky barrier rectifier

Features

* Forward current: 1.0 A
* Reverse voltage: 20 V
* Ultra low forward voltage

Applications

* Low voltage rectification
* High efficiency DC/DC conversion
* Voltage clamping
* Inverse-polarity protection
* Low power consumption applications. 1 2 PMEG2010AEB QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage MAX. 1 20 UNIT A

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PMEG2010AEB 20V ultra low MEGA Schottky barrier rectifier NXP Semiconductors

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