Datasheet4U Logo Datasheet4U.com

PMEG2010EV Datasheet - NXP Semiconductors

PMEG2010EV Low VF MEGA Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 .

PMEG2010EV Features

* Forward current: 1 A

* Reverse voltage: 20 V

* Very low forward voltage

* Ultra small SMD package

* Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS

* Low voltage rectification

* High efficiency DC/DC conversion

PMEG2010EV Datasheet (86.66 KB)

Preview of PMEG2010EV PDF
PMEG2010EV Datasheet Preview Page 2 PMEG2010EV Datasheet Preview Page 3

Datasheet Details

Part number:

PMEG2010EV

Manufacturer:

NXP ↗ Semiconductors

File Size:

86.66 KB

Description:

Low vf mega schottky barrier diode.

📁 Related Datasheet

PMEG2010EA Low VF (MEGA) Schottky barrier diode (Philips)

PMEG2010EH MEGA Schottky barrier rectifiers (nexperia)

PMEG2010EJ MEGA Schottky barrier rectifiers (nexperia)

PMEG2010EPA MEGA Schottky barrier rectifier (nexperia)

PMEG2010EPK low VF MEGA Schottky barrier rectifier (NXP Semiconductors)

PMEG2010ER MEGA Schottky barrier rectifier (nexperia)

PMEG2010ET MEGA Schottky barrier rectifiers (nexperia)

PMEG2010AEB 20V 1A ultra low VF MEGA Schottky barrier rectifier (NXP Semiconductors)

TAGS

PMEG2010EV Low MEGA Schottky barrier diode NXP Semiconductors

PMEG2010EV Distributor