PMEG2010EV Datasheet (NXP Semiconductors) - Low VF MEGA Schottky barrier diode

PMEG2010EV, Low VF MEGA Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package.

1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4

PMEG2010EV Features

* Forward current: 1 A

* Reverse voltage: 20 V

* Very low forward voltage

* Ultra small SMD package

* Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS

* Low voltage rectification

* High efficiency DC/DC conversion