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PMEG2010EV Datasheet - NXP Semiconductors

PMEG2010EV, Low VF MEGA Schottky barrier diode

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product specification Supersedes data o.
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra smal.
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PMEG2010EV_NXPSemiconductors.pdf

Preview of PMEG2010EV PDF

Datasheet Details

Part number:

PMEG2010EV

Manufacturer:

NXP ↗ Semiconductors

File Size:

86.66 KB

Description:

Low VF MEGA Schottky barrier diode

Features

* Forward current: 1 A
* Reverse voltage: 20 V
* Very low forward voltage
* Ultra small SMD package

Applications

* Low voltage rectification
* High efficiency DC/DC conversion
* Switch mode power supply
* Inverse polarity protection

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