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PMEG2010EV Datasheet - NXP Semiconductors

Low VF MEGA Schottky barrier diode

PMEG2010EV Features

* Forward current: 1 A

* Reverse voltage: 20 V

* Very low forward voltage

* Ultra small SMD package

* Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS

* Low voltage rectification

* High efficiency DC/DC conversion

PMEG2010EV General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 .

PMEG2010EV Datasheet (86.66 KB)

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Datasheet Details

Part number:

PMEG2010EV

Manufacturer:

NXP ↗ Semiconductors

File Size:

86.66 KB

Description:

Low vf mega schottky barrier diode.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product speciļ¬cation Supersedes data o.

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PMEG2010EV Low MEGA Schottky barrier diode NXP Semiconductors

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