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PMEG2010EV Low VF MEGA Schottky barrier diode

NXP Semiconductors

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Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product speciﬁcation Supersedes data o.
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra smal.

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Datasheet Specifications

Part number: PMEG2010EV
Manufacturer: NXP ↗ Semiconductors
File Size: 86.66 KB
Datasheet: PMEG2010EV_NXPSemiconductors.pdf
Description: Low VF MEGA Schottky barrier diode

Features

* Forward current: 1 A
* Reverse voltage: 20 V
* Very low forward voltage
* Ultra small SMD package

Applications

* Low voltage rectification
* High efficiency DC/DC conversion
* Switch mode power supply
* Inverse polarity protection

PMEG2010EV Distributors

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PMEG2010EV Low MEGA Schottky barrier diode NXP Semiconductors

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