PMZB950UPE - P-channel Trench MOSFET

NXP Semiconductors

The PMZB950UPE by NXP Semiconductors is a P-channel Trench MOSFET. Below is the official datasheet preview.

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PMZB950UPE P-channel Trench MOSFET by NXP Semiconductors - Datasheet Preview — Official preview page of the **PMZB950UPE** P-channel Trench MOSFET datasheet (NXP Semiconductors).

Datasheet Details

Part number	PMZB950UPE
Manufacturer	NXP Semiconductors
File Size	224.12 KB
Description	P-channel Trench MOSFET
Datasheet	PMZB950UPE-NXPSemiconductors.pdf
Additional preview pages of the PMZB950UPE datasheet.

PMZB950UPE Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3.

📁 PMZB950UPE Similar Datasheet

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Other Datasheets by NXP Semiconductors

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Published: Aug 23, 2014 |