PMZB950UPE P-channel Trench MOSFET

NXP Semiconductors

Description

PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMZB950UPE
Manufacturer: NXP ↗ Semiconductors
File Size: 224.12 KB
Datasheet: PMZB950UPE-NXPSemiconductors.pdf
Description: P-channel Trench MOSFET

Applications

* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V

PMZB950UPE Distributors

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PMZB950UPE P-channel Trench MOSFET NXP Semiconductors

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