PMZB950UPEL P-channel MOSFET

nexperia

Description

PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMZB950UPEL
Manufacturer: nexperia ↗
File Size: 719.07 KB
Datasheet: PMZB950UPEL-nexperia.pdf
Description: P-channel MOSFET

Features

* Low leakage current
* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

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PMZB950UPEL P-channel MOSFET nexperia

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