BF1108R Datasheet PDF - NXP Silicon RF switches Specs

BF1108R - Silicon RF switches

Datasheet Summary

Description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package.

The low loss and high isolation capabilities of these devices provide excellent RF switching functions.

Features

I Specially designed for low loss RF switching up to 1 GHz 1.3.

Datasheet Details

Part number	BF1108R
Manufacturer	NXP
File Size	64.71 KB
Description	Silicon RF switches
Datasheet	BF1108R Datasheet
Additional preview pages of the BF1108R datasheet.

📁 Similar Datasheet

BF1102R - Dual N-channel dual gate MOS-FETs (Philips)

BF115 - 2.0mm Pitch Socket (Global Connector Technology)

BF117 - NPN SIlicon Transistors (ETC)

BF118 - NPN SIlicon Transistors (ETC)

BF119 - NPN SIlicon Transistors (ETC)

BF1005 - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)

BF1005 - Silicon N-Channel MOSFET Tetrode (Infineon Technologies AG)

BF1005 - ON/OFF Dimming LED Driver IC (BYD)

BF1005R - Silicon N-Channel MOSFET Tetrode (Infineon Technologies AG)

BF1005S - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)

Full PDF Text Transcription

Click to expand full text

BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product proﬁle CAUTION 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.

Published: Mar 23, 2005 |