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BFG21W UHF power transistor

NXP

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Description

DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product speciﬁcation Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, S.
NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emit.

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Datasheet Specifications

Part number: BFG21W
Manufacturer: NXP ↗
File Size: 116.31 KB
Datasheet: BFG21W_PhilipsSemiconductors.pdf
Description: UHF power transistor

Features

* High power gain
* High efficiency
* 1.9 GHz operating area

Applications

* Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc.

BFG21W Distributors

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BFG21W UHF power transistor NXP

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