BLC6G10-160 UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev.01 * 12 May 2006 Objective data sheet 1.Product proﬁle 1.1 G.
160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

📥 Download Datasheet

BLC6G10-160 Datasheet Preview — Preview of BLC6G10-160 PDF

Datasheet Specifications

Part number: BLC6G10-160
Manufacturer: NXP ↗
File Size: 79.96 KB
Datasheet: BLC6G10-160_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efﬁciency = 28 % N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (dB) 23 ηD (%) 28 ACPR (dBc)
* 40[1] Test signal: 3

BLC6G10-160 Distributors

📁 Related Datasheet

BLC6G20-140 BLC6G20LS-140 BLC-015A BLC-L01D BLC-L05D BLC-L10D

📌 All Tags

BLC6G10-160 UHF power LDMOS transistor NXP

NXP BLC6G10-160-like datasheet