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BLC6G10-200 UHF power LDMOS transistor

BLC6G10-200 Description

www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev.01 * 19 April 2006 Objective data sheet 1.Product profile 1.1.
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

BLC6G10-200 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR =
* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

BLC6G10-200 Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc)
* 39[1] Test signal: 3

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