Description
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
37 [1]
ACPR (dBc)
40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 1
Features
- s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: x Average output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency = 31 % x IMD3 =.
- 37 dBc x ACPR =.
- 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use
Philips Semiconductors
BLC.