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BLC6G22-100

UHF power LDMOS transistor

BLC6G22-100 Features

* s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =

* 37 dBc x ACPR =

* 40 dBc s Easy power control s Integrated ESD protection s Excellent r

BLC6G22-100 General Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) .

BLC6G22-100 Datasheet (77.38 KB)

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Preview of BLC6G22-100 PDF

Datasheet Details

Part number:

BLC6G22-100

Manufacturer:

NXP ↗

File Size:

77.38 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 30 January 2006 Objective data sheet 1. Product profile 1.

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TAGS

BLC6G22-100 UHF power LDMOS transistor NXP

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