BLC6G22-130 UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev.01 * 30 January 2006 Objective data sheet 1.Product proﬁle 1.
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Specifications

Part number: BLC6G22-130
Manufacturer: NXP ↗
File Size: 87.91 KB
Datasheet: BLC6G22-130_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor

Features

* s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efﬁciency = 31 % x IMD3 =
* 37 dBc x ACPR =
* 40 dBc s Easy power control s Integrated ESD protection s Excellent r

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) Gp (W) 30 (dB) 16 ηD (%) 31 IMD3 ACPR (dBc) (dBc)
* 37

BLC6G22-130 Distributors

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BLC6G22-130 UHF power LDMOS transistor NXP

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