BLC6G20-75 Datasheet, Transistor, NXP

✔ BLC6G20-75 Features

s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efﬁci

✔ BLC6G20-75 Application

at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a

PDF File Details

NXP manufacturer logo

Part number:

BLC6G20-75

Manufacturer:

NXP ↗

File Size:

77.13 KB

Download:

📄 Datasheet

Description:

Uhf power ldmos transistor. 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF p

📥 Download PDF (77.13 KB)

📁 Related Datasheet

BLC6G20-110 - UHF power LDMOS transistor (NXP)

BLC6G20-140 - UHF power LDMOS transistor (Philips)

BLC6G20LS-110 - UHF power LDMOS transistor (NXP)

BLC6G20LS-140 - UHF power LDMOS transistor (Philips)

BLC6G20LS-75 - UHF power LDMOS transistor (NXP)

BLC6G22-100 - UHF power LDMOS transistor (NXP)

BLC6G22-130 - UHF power LDMOS transistor (NXP)

BLC6G22LS-100 - UHF power LDMOS transistor (NXP)

TAGS

BLC6G20-75 UHF power LDMOS transistor NXP