BLC6G20LS-75 Description
www.DataSheet4U.com BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev.01 * 30 January 2006 Objective data sheet 1.Product profile 1.1.BLC6G20LS-75 Features
* s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 =BLC6G20LS-75 Applications
* at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms
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