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BLC6G20LS-75

UHF power LDMOS transistor

BLC6G20LS-75 Features

* s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 =

* 62.5 dBc x ACPR600 =

* 72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD pro

BLC6G20LS-75 General Description

75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (.

BLC6G20LS-75 Datasheet (77.13 KB)

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Preview of BLC6G20LS-75 PDF

Datasheet Details

Part number:

BLC6G20LS-75

Manufacturer:

NXP ↗

File Size:

77.13 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 30 January 2006 Objective data sheet 1. Product profile 1.1.

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BLC6G20LS-75 UHF power LDMOS transistor NXP

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