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BLC6G20LS-75, BLC6G20-75 UHF power LDMOS transistor

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Description

www.DataSheet4U.com BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev.01 * 30 January 2006 Objective data sheet 1.Product profile 1.1.
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

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This datasheet PDF includes multiple part numbers: BLC6G20LS-75, BLC6G20-75. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLC6G20LS-75, BLC6G20-75
Manufacturer
NXP ↗
File Size
77.13 KB
Datasheet
BLC6G20-75_PhilipsSemiconductors.pdf
Description
UHF power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLC6G20LS-75, BLC6G20-75.
Please refer to the document for exact specifications by model.

Features

* s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 =
* 62.5 dBc x ACPR600 =
* 72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD pro

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms

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