BLC6G20LS-75, BLC6G20-75 Datasheet (NXP) - UHF power LDMOS transistor

BLC6G20LS-75, BLC6G20-75, UHF power LDMOS transistor

75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (

BLC6G20LS-75 Features

* s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efﬁciency = 38.5 % x ACPR400 =

* 62.5 dBc x ACPR600 =

* 72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD pro