BLC6G22LS-100, BLC6G22-100 Datasheet - NXP

BLC6G22LS-100, BLC6G22-100, UHF power LDMOS transistor

www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev.01 * 30 January 2006 Objective data sheet 1.Product proﬁle 1.
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features

* s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =
* 37 dBc x ACPR =
* 40 dBc s Easy power control s Integrated ESD protection s Excellent r

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18 ηD (%) 32 IMD3 (dBc)
* 37 [1] ACPR

BLC6G22-100_PhilipsSemiconductors.pdf